论文信息 - Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams - 字舞流文

Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams

A. Uedono | S. Chichibu | S. Ishibashi | M. Dickmann | C. Hugenschmidt | W. Egger | T. Narita | K. Kojima | K. Kataoka | T. Koschine | K. Shima | Hiroko Iguchi