论文信息 - The slow relaxation of capacitance in ferroelectric devices under electrical pulse influence

The slow relaxation of capacitance in ferroelectric devices under electrical pulse influence

The influence of technology parameters and construction of ferroelectric capacitors on capacitance relaxation mechanisms in BaxSr1-xTiO3 (BSTO) varactors prepared by ion-plasma deposition technique has been investigated. The slow relaxation phenomenon (10divide100 s) in ferroelectric elements in paraelectric state can be explained by the presence of space charge localized on trapping defects in high defected interface layer electrode-ferroelectric.

[1] A.B. Kozyrev,et al. Optimal Microwave properties of thin BSTO films for high frequency applications , 2003, 2003 33rd European Microwave Conference, 2003.

[2] A. Kozyrev,et al. Response Time of Sandwich Varactors Containing Thin Ferroelectric Film , 2005 .

[3] A. Kozyrev,et al. Microwave up-converter based on a nonlinear ferroelectric capacitor , 2005 .

[4] Robert Benjamin Laibowitz,et al. Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz , 1998 .

[5] A. Kozyrev,et al. Ferroelectric Phase Shifters Operating in Digital-Analog Regime , 2005 .

[6] D. Ginley,et al. Nonlinear properties of thin ferroelectric film-based capacitors at elevated microwave power , 2006 .

[7] L. Sengupta,et al. Millimeter-Wave Loaded Line Ferroelectric Phase Shifters , 2003 .

[8] L. Sengupta,et al. Characterization of quality of BaxSr1−xTiO3 thin film by the commutation quality factor measured at microwaves , 2002 .