Reverse degradation of nickel graphene junction by hydrogen annealing
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[1] O. Richard,et al. Transition metal contacts to graphene , 2015 .
[2] W. Haensch,et al. End-bonded contacts for carbon nanotube transistors with low, size-independent resistance , 2015, Science.
[3] Bingyan Chen,et al. Realization of low contact resistance close to theoretical limit in graphene transistors , 2015, Nano Research.
[4] Chang Tai Nai,et al. What does annealing do to metal-graphene contacts? , 2014, Nano letters.
[5] J. U. Lee,et al. Substrate dielectric effects on graphene field effect transistors , 2014 .
[6] H. Gong,et al. Low-contact-resistance graphene devices with nickel-etched-graphene contacts. , 2013, ACS nano.
[7] K. L. Shepard,et al. One-Dimensional Electrical Contact to a Two-Dimensional Material , 2013, Science.
[8] S. Jun,et al. Clean transfer of graphene and its effect on contact resistance , 2013 .
[9] K. Nagashio,et al. The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity , 2013, 1307.0690.
[10] X. Liang,et al. Ultraviolet/ozone treatment to reduce metal-graphene contact resistance , 2012, 1212.0838.
[11] C. Kocabas,et al. Rapid thermal annealing of graphene-metal contact , 2012 .
[12] Ivan I. Kravchenko,et al. UV ozone treatment for improving contact resistance on graphene , 2012 .
[13] R. S. Ross,et al. Ultra-low resistance ohmic contacts in graphene field effect transistors , 2012 .
[14] Eiichiro Watanabe,et al. Low contact resistance metals for graphene based devices , 2012 .
[15] C. Jin,et al. Graphene annealing: how clean can it be? , 2012, Nano letters.
[16] Seung-Hwan Lee,et al. Plasma treatments to improve metal contacts in graphene field effect transistor , 2011 .
[17] J. Woo,et al. Contact resistance in top-gated graphene field-effect transistors , 2011 .
[18] J. Kong,et al. Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance , 2011, IEEE Electron Device Letters.
[19] Mark S. Lundstrom,et al. Substrate Gating of Contact Resistance in Graphene Transistors , 2011, IEEE Transactions on Electron Devices.
[20] F. Xia,et al. The origins and limits of metal-graphene junction resistance. , 2011, Nature nanotechnology.
[21] K. Nagashio,et al. Contact resistivity and current flow path at metal/graphene contact , 2010, 1008.1826.
[22] Katsumi Tanigaki,et al. Charge-density depinning at metal contacts of graphene field-effect transistors , 2010, 1003.3284.
[23] F. Xia,et al. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. , 2010, Nano letters.
[24] Luigi Colombo,et al. Contact resistance in few and multilayer graphene devices , 2010 .
[25] A. Morpurgo,et al. Contact resistance in graphene-based devices , 2009, 0901.0485.
[26] K. Novoselov,et al. Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane , 2008, Science.
[27] K. Shepard,et al. Current saturation in zero-bandgap, top-gated graphene field-effect transistors. , 2008, Nature nanotechnology.
[28] Xu Du,et al. TOWARDS BALLISTIC TRANSPORT IN GRAPHENE , 2008, 0901.1420.
[29] S. Xiao,et al. Intrinsic and extrinsic performance limits of graphene devices on SiO2. , 2007, Nature nanotechnology.
[30] E. Williams,et al. Charged Impurity Scattering in Graphene , 2007, 0708.2408.
[31] Andre K. Geim,et al. Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.