论文信息 - GaAs/Al0.4Ga0.6As triple barrier resonant tunneling diodes with (4 1 1)A super-flat interfaces grown by MBE - 字舞流文

GaAs/Al0.4Ga0.6As triple barrier resonant tunneling diodes with (4 1 1)A super-flat interfaces grown by MBE

S. Hiyamizu | K. Shinohara | Yo Shimizu | S. Shimomura

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