论文信息 - Research of different structure integrated photodetectors in standard CMOS technology

Research of different structure integrated photodetectors in standard CMOS technology

Three kinds of structure photodetectors, N+/N-Well/P-Substrate, P+/N-Well/P-Substrate and finger N+/N-Well/P-Substrate, have been fabricated in CSMC 0.5μm CMOS process. The characteristics of different photodetectors are comparatively tested. The N+/N-Well/P-Substrate photodetector is choosed for construction of novel Spice model and fabrication of OEIC chip, considered about both high responsivity and good response speed. A novel Spice model of photodetector is introduced for compatible-design of OEIC. At 780nm and 2.5V reverse bias, the simulated responsivity based on the Spice model is 0.251A/W, close to the measured value 0.253A/W. Finally, a full CMOS monolithic OEIC is successfully accomplished with a gain of 38.1mV/μW in 780nm for optical-disc signal pickup.

Wei Chen | Xiang Cheng | Jiantao Bian | Chao Chen

[1] B. Nauta,et al. Integrated photodiodes in standard CMOS technology for CD and DVD applications , 2004, 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716).

[2] Jan Genoe,et al. Calculation of the current response of the spatially modulated light CMOS detector , 2001 .

[3] T. K. Woodward,et al. 1-Gb/s integrated optical detectors and receivers in commercial CMOS technologies , 1999 .

[4] Anne-Johan Annema,et al. Bandwidth of integrated photodiodes in standard CMOS for CD/DVD applications , 2005, Microelectron. Reliab..

[5] Chao Chen,et al. Simulation and design of Si double-photodetector for monolithic OEIC in standard CMOS technology , 2005, SPIE/OSA/IEEE Asia Communications and Photonics.

[6] Behzad Razavi. Prospects of CMOS technology for high-speed optical communication circuits , 2001 .