Electrical and optical properties of pulse plated CdSxTe1-x films

Thin films of CdSxTe1-x were deposited by the pulse electrodeposition technique using cadmium sulfate, sodium thiosulfate, and tellurium dioxide on titanium and conducting glass substrates. Structural studies indicated the formation of polycrystalline films possessing hexagonal structure. The resistivity varies from 53 Ω cm to 8 Ω cm as the stochiometric coefficient “x” value decreases from 1 to 0. The carrier concentration increases with CdTe concentration. It is observed that as the post-heat treatment temperature increases, the photosensitivity also increases. It is observed that a post-heat treatment temperature of 550 °C results in high photosensitivity as well as low light resistance. The optical constants, refractive index (n) and extinction coefficient (k) were evaluated from the transmission spectra of the films of different composition.

[1]  J. Loferski,et al.  Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy Conversion , 1956 .

[2]  D. Cahen,et al.  Photoelectrochemical energy conversion and storage using polycrystalline chalcogenide electrodes , 1976, Nature.

[3]  D. Cahen,et al.  Painted, Polycrystalline Thin Film Photoelectrodes for Photoelectrochemical Solar Cells , 1980 .

[4]  M. Russak,et al.  Vacuum evaporated CdSe /SUB 1-x/ Te /SUB x/ thin films for electrochemical photovoltaic cells , 1984 .

[5]  R. Tenne,et al.  Ternary Cd(Se,Te) alloy semiconductors: Synthesis, material characterization, and high-efficiency photoelectrochemical cells , 1985 .

[6]  J. Windheim,et al.  Removal and Preparation of Electrodeposited Semiconductors for High Impedance Hall Effect Measurements , 1991 .

[7]  L. Kazmerski,et al.  Investigation of polycrystalline CdTe thin films deposited by physical vapor deposition, close‐spaced sublimation, and sputtering , 1995 .

[8]  L. Damodare,et al.  A study of band-bending and barrier height variation in thin film n-CdSe0.5Te0.5 photoanode/polysulphide junctions , 1996 .

[9]  D. S. Sutrave,et al.  Cd1-xZnxSe thin film electrodes : an electrochemical photovoltaic study , 1997 .

[10]  K. Murase,et al.  Electrical Properties of CdTe Layers Electrodeposited from Ammoniacal Basic Electrolytes , 2003 .

[11]  F. Rojas,et al.  Optical characterization of Cd(Sx,Te1-x) thin films deposited by evaporation , 2003 .

[12]  K. Murase,et al.  Hall effect measurements on CdTe layers electrodeposited from acidic aqueous electrolyte , 2004 .

[13]  D. S. Sutrave,et al.  Photovoltaic properties of n-CdS1−xTex thin film/polysulphide photoelectrochemical solar cells prepared by chemical bath deposition , 2004 .

[14]  C. Kannan,et al.  Pulse plated CdSxTe1−x films and their properties , 2009 .

[15]  U. Reislöhner,et al.  Formation of CdSxTe1–x at the p‐n junction of CdS‐CdTe solar cells , 2009 .