Direct evidence of dislocation transmission through ∊= 9 grain boundaries in germanium and silicon by in situ high-voltage electron microscopy observations

Le microscope electronique a haute tension, utilise dans l'etude in situ de la deformation de bicristaux de silicium et de germanium, a revele que des dislocations traversaient des joints de grains e=9, meme lorsque leurs vecteurs de Burgers n'etaient pas vecteurs de reseau du deuxieme grain. Ces dislocations sont parfaites (b=1/2 ) ou, le plus souvent, partielles de Shockley, entrai←nant des defauts d'empilement lies au joint. Les dislocations peuvent se dissocier dans le joint en dislocations glissiles DSC; les dislocations residuelles peuvent etre deplacees. Les caracteristiques observees de ce phenomene peuvent s'expliquer par un modele base sur des calculs des energies des configurations possibles des dislocations formees lors des etapes successives du processus de transmission

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