Si-based GeSn lasers with wavelength coverage of 2 to 3 {\mu}m and operating temperatures up to 180 K
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R. Soref | Jifeng Liu | A. Mosleh | J. Margetis | S. Al-Kabi | S. Ghetmiri | W. Du | M. Mortazavi | J. Tolle | Shui-Qing Yu | W. Dou | Yiyin Zhou | Baohua Li | P. Grant | G. Sun | T. Pham