Analysis of radiation response of InGaP, InGaAsP, and InGaAs solar cells by displacement damage dose approach

Radiation effects in InGaP, InGaAsP, and InGaAs solar cells were measured and analyzed using displacement damage dose approach by means of different energies of proton irradiation. Different In-P composition and proton energy depended degradation effects on the InGaP, InGaAsP, and InGaAs solar cell were investigated. The radiation-resistance increased with an increased in the fraction of In-P bonds in InGaP, InGaAsP, and InGaAs solar cells. It was found that the degradation of spectral response in the region of longer wavelength (red) for lower proton fluence and an anomalous spectral response in the region of shorter wavelength (blue) for higher proton fluence were observed. The damage coefficient K/sub L/ for the proton-irradiated InGaP, InGaAsP, and InGaAs was determined from the spectral response data and compared with that of InP.