论文信息 - The electrical properties of CdTe films grown by hot wall epitaxy

The electrical properties of CdTe films grown by hot wall epitaxy

Abstract The electrical properties of CdTe thin films deposited on BaF 2 substrates were investigated. Different treatments of the substrates prior to deposition were tried. For films grown on thermally precleaned substrates the mobility increased exponentially with temperature in the temperature range 200–300 K and decreased with increasing carrier concentration. These effects can be explained by means of a grain boundary model. However, the mobility of films deposited on substrates which have a very thin PbTe buffer layer showed a bulk-like temperature dependence.

A. Lopez‐Otero | A. Lopez-Otero | W. Huber | W. Huber

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