论文信息 - Physcial characterization of ultrathin high k dielectrics

Physcial characterization of ultrathin high k dielectrics

Targeting very thin equivalent oxides ( 2 , as silicate or mixed with Al 2 O 3 . In some cases nitrogen is added to improve the high-temperature stability. Depending on the deposition conditions ALD as well as MOCVD show serious deficiencies in terms of film closure and material density for ultra thin (

[1] Wilfried Vandervorst,et al. Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers , 2002 .