A 0.13µm SiGe BiCMOS technology featuring f T /f max of 240/330 GHz and gate delays below 3 ps

A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f T =240 GHz, f max =330 GHz, BV CEO =1.7 V) along with high-voltage HBTs (f T =50 GHz, f max =130 GHz, BV CEO =3.7 V) integrated in a dual-gate, triple-well RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above 200 GHz are demonstrated.

[1]  Mau-Chung Frank Chang,et al.  Terahertz CMOS Frequency Generator Using Linear Superposition Technique , 2008, IEEE Journal of Solid-State Circuits.

[2]  Christoph Scheytt,et al.  122 GHz low-noise-amplifier in sige technology , 2009, 2009 Proceedings of ESSCIRC.

[3]  M. Racanelli,et al.  Silicon foundry technology for RF products , 2006, Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[4]  D. Knoll,et al.  SiGe HBT module with 2.5 ps gate delay , 2008, 2008 IEEE International Electron Devices Meeting.

[5]  Bernd Heinemann,et al.  High-frequency SiGe:C HBTs with elevated extrinsic base regions , 2005 .

[6]  P. Chevalier,et al.  0.13μm SiGe BiCMOS technology for mm-wave applications , 2008, 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[7]  G. Carchon,et al.  A 205/275GHz fT/fmax Airgap Isolated 0.13 m BiCMOS Technology featuring on-chip High Quality Passives , 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.

[8]  D. Knoll,et al.  Novel collector design for high-speed SiGe:C HBTs , 2002, Digest. International Electron Devices Meeting,.

[9]  D. Knoll,et al.  SiGe:C BiCMOS technology with 3.6 ps gate delay , 2003, IEEE International Electron Devices Meeting 2003.

[10]  D. Celi,et al.  A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX , 2009, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[11]  D. Knoll,et al.  SiGe BiCMOS Technology with 3.0 ps Gate Delay , 2007, 2007 IEEE International Electron Devices Meeting.

[12]  D. Knoll,et al.  High-performance BiCMOS technologies without epitaxially-buried subcollectors and deep trenches , 2006, 2006 International SiGe Technology and Device Meeting.

[13]  R. Lachner,et al.  A SiGe Monolithically Integrated 278 GHz Push-Push Oscillator , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[14]  B. Jagannathan,et al.  SOI CMOS Technology with 360GHz fT NFET, 260GHz fT PFET, and Record Circuit Performance for Millimeter-Wave Digital and Analog System-on-Chip Applications , 2007, 2007 IEEE Symposium on VLSI Technology.

[15]  M. Racanelli,et al.  SiGe BiCMOS technology for RF circuit applications , 2005, IEEE Transactions on Electron Devices.

[16]  M. Khater,et al.  A BiCMOS Technology Featuring a 300/330 GHz (fT/fmax) SiGe HBT for Millimeter Wave Applications , 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.

[17]  S.P. Voinigescu,et al.  165-GHz Transceiver in SiGe Technology , 2008, IEEE Journal of Solid-State Circuits.

[18]  K. Schmalz,et al.  A 122 GHz receiver in SiGe technology , 2009, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[19]  D. Wang,et al.  Product applications and technology directions with SiGe BiCMOS , 2002, 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.

[20]  G.M. Rebeiz,et al.  A W-band SiGe 1.5V LNA for imaging applications , 2008, 2008 IEEE Radio Frequency Integrated Circuits Symposium.

[21]  Chih-Ming Hung,et al.  A 410GHz CMOS Push-Push Oscillator with an On-Chip Patch Antenna , 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.