56Gb/s PDM-BPSK experiment with a novel InP-monolithic source based on prefixed optical phase switching

A novel monolithic QPSK-ready transmitter source based on prefixed phase switching by fast EAMs has been realized on InP using a flexible photonic integrating circuit technology. It has been used up to 56Gb/s in DPSK coherent transmission experiments.

[1]  I. Kang Phase-shift-keying and on-off-keying with improved performances using electroabsorption modulators with interferometric effects. , 2007, Optics express.

[2]  S. Bigo,et al.  Overlaying 10 Gb/s Legacy Optical Networks With 40 and 100 Gb/s Coherent Terminals , 2012, Journal of Lightwave Technology.

[3]  N. Kikuchi,et al.  80-Gb/s Low-Driving-Voltage InP DQPSK Modulator With an n-p-i-n Structure , 2009, IEEE Photonics Technology Letters.

[4]  F. Blache,et al.  42 GHz bandwidth InGaAlAs/InP electro absorption modulator with sub-volt modulation drive capability in a 50 nm spectral range , 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

[5]  Peter J. Winzer,et al.  Compact EAM-Based InP DQPSK Modulator and Demonstration at 80 Gb/s , 2007, OFC 2007.

[6]  C. Kazmierski,et al.  Electro-absorption-based fast photonic integrated circuit sources for next network capacity scaling [invited] , 2012, IEEE/OSA Journal of Optical Communications and Networking.

[7]  A. Gnauck,et al.  28-Gbaud InP square or hexagonal 16-QAM modulator , 2011, 2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference.