Effect of /spl gamma/-irradiation on the electrophysical parameters of metal/GaAs barrier structures with textured interfaces

We investigated (i) morphology of the GaAs surface with a quasigrating-type microrelief and (ii) current flow mechanism in the Au/GaAs barrier structures formed on the above textured surface. Both Atomic Force Microscopy (AFM) and measurements of electrical (I-V and C-V) characteristics were used. We have found both semiconductor and interface parameters, as well as studied how they depend on /sup 60/Co /spl gamma/-irradiation in the 10/sup 3//spl divide/10/sup 7/ Gy dose range. The parameters measured were shown to be tolerant to such irradiation doses.