Measurement of gain, group index, group velocity dispersion, and linewidth enhancement factor of an InGaN multiple quantum-well laser diode
暂无分享,去创建一个
[1] Yongzhen Huang,et al. Measurement of gain spectrum for Fabry-Perot semiconductor lasers by the Fourier transform method with a deconvolution process , 2003 .
[2] Yong-Zhen Huang,et al. Measurement of gain spectrum for semiconductor lasers utilizing integrations of product of emission spectrum and a phase function over one mode interval , 2003, IEEE Photonics Technology Letters.
[3] S. Nakamura,et al. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes , 2000 .
[4] J. Faist,et al. Measurement of semiconductor laser gain and dispersion curves utilizing Fourier transforms of the emission spectra , 1999, IEEE Photonics Technology Letters.
[5] D. Hofstetter,et al. Measurement of optical cavity properties in semiconductor lasers by Fourier analysis of the emission spectrum , 1998 .
[6] L. Coldren,et al. Diode Lasers and Photonic Integrated Circuits , 1995 .
[7] Erich P. Ippen,et al. Femtosecond time domain measurements of group velocity dispersion in diode lasers at 1.5 mu m , 1992 .
[8] H. Yasaka,et al. Group delay and alpha -parameter measurement of 1.3 mu m semiconductor traveling-wave optical amplifier using the interferometric method , 1991 .
[9] B. Hakki,et al. Gain spectra in GaAs double−heterostructure injection lasers , 1975 .
[10] B. W. Hakki,et al. cw degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gain , 1973 .