Model for random telegraph signals in sub-micron MOSFETS
暂无分享,去创建一个
Fang Wang | Nuditha Vibhavie Amarasinghe | Zeynep Celik-Butler | Z. Çelik-Butler | Fang Wang | N. Amarasinghe | A. Zlotnicka | Anna Zlotnicka
[1] R. Howard,et al. Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency ( 1 f ?) Noise , 1984 .
[2] Ping-Keung Ko,et al. A physics-based MOSFET noise model for circuit simulators , 1990 .
[3] C. Hu,et al. Hot-electron-induced traps studied through the random telegraph noise , 1991, IEEE Electron Device Letters.
[4] Collins,et al. Anomalous telegraph noise in small-area silicon metal-oxide-semiconductor field-effect transistors. , 1988, Physical review. B, Condensed matter.
[5] Single electron switching events in nanometer-scale Si MOSFET's , 1985, IEEE Transactions on Electron Devices.
[6] E. P. Vandamme,et al. Critical discussion on unified 1/f noise models for MOSFETs , 2000 .
[7] Michael J. Uren,et al. Individual defects at the Si:SiO2 interface , 1989 .
[8] Eddy Simoen,et al. Explaining the amplitude of RTS noise in submicrometer MOSFETs , 1992 .
[10] Z. Çelik-Butler,et al. A method for locating the position of oxide traps responsible for random telegraph signals in submicron MOSFETs , 2000 .
[11] M. Dutoit,et al. Random telegraph signals in deep submicron n-MOSFET's , 1994 .
[12] Nuditha Vibhavie Amarasinghe,et al. Complex random telegraph signals in 0.06 μm2 MDD n-MOSFETs , 2000 .
[13] Nuditha Vibhavie Amarasinghe,et al. Extraction of oxide trap properties using temperature dependence of random telegraph signals in submicron metal-oxide-semiconductor field-effect transistors , 2001 .
[14] M. J. Kirton,et al. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .
[15] Max J. Schulz,et al. Individual, attractive defect centers in the SiO2-Si interface of μm-sized MOSFETs , 1991 .
[16] Antonio Gnudi,et al. Internal probing of submicron FETs and photoemission using individual oxide traps , 1990 .
[17] Z. Çelik-Butler,et al. Characterization of oxide traps in 0.15 μm2 MOSFETs using random telegraph signals , 2000 .
[18] S. Machlup,et al. Noise in Semiconductors: Spectrum of a Two‐Parameter Random Signal , 1954 .
[19] C. Hu,et al. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .
[20] Zeynep Celik-Butler,et al. Effects of quantization on random telegraph signals observed in deep-submicron MOSFETs , 2000 .
[21] P.K. Ko,et al. Random telegraph noise of deep-submicrometer MOSFETs , 1990, IEEE Electron Device Letters.
[22] L.K.J. Vandamme,et al. On the anomalous behavior of the relative amplitude of RTS noise , 1998 .
[23] K. Kandiah,et al. A physical model for random telegraph signal currents in semiconductor devices , 1989 .