A polar modulator transmitter for EDGE

This 0.5 /spl mu/m SiGe BiCMOS polar modulator IC adds EDGE transmit capability to a GSM transceiver IC without any RF filters. The modulator achieves phase noise of -152 dBc/Hz and -164 dBc/Hz at 10 MHz and 20 MHz, respectively, with a measured EVM of 3%. The IC consumes 55 mA and 75 mA at 2.7 V for GSM and EDGE, respectively.

[1]  S. Atkinson,et al.  A direct conversion transceiver for multi-band GSM application , 2000, 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096).