论文信息 - High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

GaN HEMT power transistors are a key enabling technology for the successful design of WiMAX, WiBro and next generation radio systems. This article describes the design and performance of a number of demonstration amplifiers using Cree GaN HEMTs, including a Doherty circuit providing the highest reported performance for a WiMAX power amplifier.

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