Ruddlesden-Popper faults in LaNiO3/LaAlO3 superlattices

Scanning transmission electron microscopy in combination with electron energy-loss spectroscopy is used to study LaNiO3/LaAlO3 superlattices grown on (La,Sr)AlO4 with varying single-layer thicknesses, which are known to control their electronic properties. The microstructure of the films is investigated on the atomic level and the role of observed defects is discussed in the context of the different properties. Two types of Ruddlesden-Popper faults are found, which are either two or three dimensional. The common planar Ruddlesden-Popper fault is induced by steps on the substrate surface. In contrast, the three-dimensionally arranged Ruddlesden-Popper fault, whose size is in the nanometer range, is caused by the formation of local stacking faults during film growth. Furthermore, the interfaces of the superlattices are found to show different sharpness, but the microstructure does not depend substantially on the single-layer thickness.

[1]  H. Hwang,et al.  BASIC NOTIONS , 2022 .

[2]  Q. Ramasse,et al.  Polarity-driven nickel oxide precipitation in LaNiO3-LaAlO3 superlattices , 2011 .

[3]  Y. Ikuhara,et al.  Growth of Ruddlesden-Popper type faults in Sr-excess SrTiO3 homoepitaxial thin films by pulsed laser deposition , 2011 .

[4]  H.-U. Habermeier,et al.  Dimensionality Control of Electronic Phase Transitions in Nickel-Oxide Superlattices , 2011, Science.

[5]  M. Weyland,et al.  Chemistry of Ruddlesden–Popper planar faults at a ferroelectric–ferromagnet perovskite interface , 2011 .

[6]  M. Gabay,et al.  Metal-insulator transition in ultrathin LaNiO3 films. , 2011, Physical review letters.

[7]  K. Held,et al.  Electronic structure of nickelates: From two-dimensional heterostructures to three-dimensional bulk materials , 2010, 1111.1111.

[8]  M. Tsukada,et al.  Dimensionality-driven insulator–metal transition in A-site excess non-stoichiometric perovskites , 2010, Nature communications.

[9]  J. Zuo,et al.  Presence and spatial distribution of interfacial electronic states in LaMnO3 -SrMnO3 superlattices , 2010 .

[10]  J. Mannhart,et al.  Oxide Interfaces—An Opportunity for Electronics , 2010, Science.

[11]  Leon Balents,et al.  Low-dimensional Mott material: transport in ultrathin epitaxial LaNiO3 films , 2010 .

[12]  J. Schubert,et al.  Intermixing and charge neutrality at DyScO3/SrTiO3 interfaces , 2009 .

[13]  D. Muller,et al.  Electron scattering at dislocations in LaAlO3/SrTiO3 interfaces. , 2009, Physical review letters.

[14]  X. Chen,et al.  Structural Dependence of Microwave Dielectric Properties of SrRAlO4 (R = Sm, Nd, La) Ceramics: Crystal Structure Refinement and Infrared Reflectivity Study , 2008 .

[15]  Renat N. Khaliullin,et al.  Analytic expressions for the statistics of the primitive-path length in entangled polymers. , 2008, Physical review letters.

[16]  D. Muller,et al.  Asymmetric interface profiles in LaVO3∕SrTiO3 heterostructures grown by pulsed laser deposition , 2007 .

[17]  J. Mannhart,et al.  Tunable Quasi-Two-Dimensional Electron Gases in Oxide Heterostructures , 2006, Science.

[18]  R. Waser,et al.  Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 , 2006, Nature materials.

[19]  R. Waser,et al.  Misfit dislocations in nanoscale ferroelectric heterostructures , 2005 .

[20]  K. Rabe,et al.  Origin of antiphase domain boundaries and their effect on the dielectric constant of Ba0.5Sr0.5TiO3 films grown on MgO substrates , 2002 .

[21]  M. Čeh,et al.  Formation of Ruddlesden–Popper faults and polytype phases in SrO-doped SrTiO_3 , 2000 .

[22]  Toshimasa Suzuki,et al.  Defect structure in homoepitaxial non-stoichiometric strontium titanate thin films , 2000 .

[23]  J. Rodríguez-Carvajal,et al.  Neutron-diffraction study of RNiO3 (R=La,Pr,Nd,Sm): Electronically induced structural changes across the metal-insulator transition. , 1992, Physical review. B, Condensed matter.

[24]  R. Tilley.  An electron microscope study of perovskite-related oxides in the SrTiO system , 1977 .