Electronic states and radiative recombination processes in ZnS-ZnSe short period superlattices

This paper addresses the growth of short period ZnS-ZnSe superlattices by low pressure Metal-Organic Vapor Phase Epitaxy. We have correlated the photoluminescence line shape to the interface roughness within the context of a phenomenological interface disorder. Using additional reflectivity experiments we could develop envelope function calculation and find the band offset. Finally we have calculated the exciton binding energy in ZnSe-ZnS quantum wells in the context a the variational approach using models of varying sophistication.