Short-wavelength InGaAlP visible laser diodes

Results achieved on the operation of short-wavelength InGaAlP visible-light laser diodes are described. It is found that there is a strong correlation between operation temperature and oscillation wavelength. The deterioration of favorable temperature characteristics in the short-wavelength region is attributed to an increase in the leakage current, which originates in a small conduction-band discontinuity inherent in the InGaAlP material system. The introduction of a highly doped p-cladding layer improves these temperature characteristics. Short-wavelength oscillation at 630-nm-band wavelength was achieved for transverse-mode stabilized InGaAlP lasers. >

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