Growth, structure, and optical properties of GaSb quantum dot by LPE technique

In this paper, we have grown self-assembled GaSb quantum dots (QDs) on GaAs (100) substrate by liquid phase epitaxy (LPE) technique. The surface morphology, density and size distribution of GaSb QDs are investigated by High-Resolution Scanning Electron Microscope and Atomic Force Microscopy, respectively. Cross-sectional transmission electron microscopy is employed to obtain a cross sectional image of single quantum dot and to present the composition of QDs by focused energy dispersive X-ray (EDX). Feature of QDs of room-temperature photoluminescence (PL) spectroscopy is obvious, and the peak of the QDs at ~l.leV is well separated from wetting layer (WL) at ~ 1.34 eV.