Vacancy Character of Damage Zones in Ion-Irradiated Silicon
暂无分享,去创建一个
I. V. Mitchell | M. Vos | P. Schultz | P. Simpson | C. Wu
[1] S. Dannefaer,et al. Positron Annihilation in Electron Irradiated Silicon , 1991 .
[2] K. Lynn,et al. Interaction of positron beams with surfaces, thin films, and interfaces , 1988 .
[3] P. Schultz. A variable-energy positron beam for low to medium energy research , 1988 .
[4] R. Nieminen,et al. Monte Carlo calculations of keV electron and positron slowing down in solids. II , 1983 .
[5] T. Tan,et al. Ion-induced defects in semiconductors , 1981 .
[6] J. Biersack,et al. A Monte Carlo computer program for the transport of energetic ions in amorphous targets , 1980 .
[7] S. Dannefaer,et al. Influence of defects and temperature on the annihilation of positrons in neutron-irradiated silicon , 1976 .
[8] H. Stein,et al. LOCALIZED MODES AND DIVACANCY ABSORPTION IN OXYGEN ION IMPLANTED Si , 1970 .
[9] J. Lori,et al. Characteristics of Neutron Damage in Silicon , 1968 .
[10] G. D. Watkins,et al. DEFECTS IN IRRADIATED SILICON: ELECTRON PARAMAGNETIC RESONANCE OF THE DIVACANCY , 1965 .
[11] Leonard C. Feldman,et al. Materials analysis by ion channeling , 1982 .
[12] J. Borders,et al. DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATION , 1969 .