论文信息 - Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier at 670 nm - 字舞流文

Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier at 670 nm

A narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. 800 mW output power is obtained, and the laser system is tunable from 655 to 679 nm.

B. Sumpf | G. Erbert | Ole B. Jensen | Mingjun Chi | B. Sumpf | G. Erbert | O. Jensen | P. Petersen | M. Chi | P. M. Petersen

[1] B. Sumpf,et al. Microexternal cavity tapered lasers at 670 nm with 5 W peak power and nearly diffraction-limited beam quality. , 2008, Optics letters.

[2] M. Weyers,et al. 670 nm tapered lasers and amplifier with output powers P ⩾ 1 W and nearly diffraction limited beam quality , 2007, SPIE OPTO.

[3] M. Mewes,et al. High-power multiple-frequency narrow-linewidth laser source based on a semiconductor tapered amplifier. , 1999, Optics letters.

[4] Peter E. Andersen,et al. Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier , 2005 .

[5] Bernd Sumpf,et al. High-brightness diode lasers , 2003 .

[6] G. Tränkle,et al. 670 nm semiconductor lasers for lithium spectroscopy with 1W , 2007, SPIE OPTO.