Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation
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K. Nakagawa | M. Ogino | H. Nakazawa | J. Yamanaka | Masaaki Tachioka | K. Arimoto | C. Yamamoto | T. Arai | T. Takamatsu | K. Kamimura | Mai Shirakura