A Latchup-Immune and Robust SCR Device for ESD Protection in 0.25-μm 5-V CMOS Process

Based on good electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) device is used for on-chip ESD protection. The major concern of SCR is the latch-up issue, because of its low holding voltage. Previous papers tried to design latchup-immune SCR devices; however, those devices would cause lower ESD robustness. In this letter, a new latchup-immune and robust SCR device for ESD protection is proposed and verified in a 0.25-μm 5-V CMOS process. Through inserting one additional parasitic bipolar junction transistor into SCR device structure, this new proposed SCR can increase the holding voltage without causing degradation on its ESD robustness.

[1]  Chung-Yu Wu,et al.  Modeling the positive-feedback regenerative process of CMOS latchup by a positive transient pole method. I. theoretical derivation , 1995 .

[2]  Ming-Dou Ker,et al.  Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits , 2005, IEEE Transactions on Device and Materials Reliability.

[3]  Ming-Dou Ker.  Lateral SCR devices with low-voltage high-current triggering characteristics for output ESD protection in submicron CMOS technology , 1998 .

[4]  G. Meneghesso,et al.  Development of a new high holding voltage SCR-based ESD protection structure , 2008, 2008 IEEE International Reliability Physics Symposium.

[5]  Yan Han,et al.  High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications , 2012, IEEE Electron Device Letters.

[6]  Ming-Dou Ker,et al.  SCR device with dynamic holding voltage for on-chip ESD protection in a 0.25-/spl mu/m fully salicided CMOS process , 2004 .

[7]  Koen G. Verhaege,et al.  High Holding Current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation , 2002, 2002 Electrical Overstress/Electrostatic Discharge Symposium.

[8]  Ming-Dou Ker,et al.  Component-Level Measurement for Transient-Induced Latch-up in CMOS ICs Under System-Level ESD Considerations , 2006, IEEE Transactions on Device and Materials Reliability.

[9]  Sorgeloos Bart,et al.  On-chip ESD protection with improved high holding current SCR (HHISCR) achieving IEC 8kV contact system level , 2010, Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010.

[10]  Zhiwei Liu,et al.  Novel Silicon-Controlled Rectifier (SCR) for High-Voltage Electrostatic Discharge (ESD) Applications , 2008, IEEE Electron Device Letters.