论文信息 - Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy - 字舞流文

Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy

V. Chaldyshev | V. Preobrazhenskii | M. D. Vilisova | M. Putyato | B. Semyagin | L. G. Lavrent’eva | A. E. Kunitsyn | S. Toropov