论文信息 - A platform for GaAs opto-electronic integrated circuits based on GaAs/AlGaAs overgrowth of patterned InGaP - 字舞流文

A platform for GaAs opto-electronic integrated circuits based on GaAs/AlGaAs overgrowth of patterned InGaP

We describe how novel approaches for fabrication of GaAs-based self-aligned lasers, superluminescent diodes and distributed feedback lasers provide the foundations for a toolkit for GaAs-based opto-electronic integrated circuits.

J.S. Roberts | K.M. Groom | B.J. Stevens | P.D.L. Greenwood | D.T.D. Childs | K. Kennedy | P.W. Fry | R.A. Hogg

[1] T. Suzuki,et al. AlGaAs/GaAs self-aligned LD's fabricated by the process containing vapor phase etching and subsequent MOVPE regrowth , 1987 .

[2] Johann Peter Reithmaier,et al. Wide range tunable laterally coupled distributed-feedback lasers based on InGaAs-GaAs quantum dots , 2002 .

[3] M. Hopkinson,et al. Multi-section quantum dot superluminescent diodes for spectral shape engineering , 2009 .

[4] W. Drexler,et al. Three-dimensional optical coherence tomography at 1050 nm versus 800 nm in retinal pathologies: enhanced performance and choroidal penetration in cataract patients. , 2007, Journal of biomedical optics.

[5] M. Hopkinson,et al. Quantum Well and Dot Self-Aligned Stripe Lasers Utilizing an InGaP Optoelectronic Confinement Layer , 2009, IEEE Journal of Selected Topics in Quantum Electronics.

[6] T. Miyazaki,et al. 0.98-1.02 mu m strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides , 1993 .

[7] G. Erbert,et al. High-power 894 nm monolithic distributed-feedback laser. , 2007, Optics express.