论文信息 - Direct parametric extraction of 1/f noise source magnitude and physical location from baseband spectra in HBTs

Direct parametric extraction of 1/f noise source magnitude and physical location from baseband spectra in HBTs

This work describes a novel equivalent circuit representation for the modeling of low frequency 1/f noise in Heterojunction Bipolar Transistors (HBTs), and is presented as part of an extraction procedure which combines direct calculation of the HBT equivalent circuit from S-parameters, and separate measurement of the base and collector noise voltage spectra to determine the magnitude and physical location of the dominant intrinsic 1/f noise sources within the device.

Mau-Chung Frank Chang | John A. Higgins | W. J. Ho | A. Sailer | David R. Pehlke

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