High speed, high current capacity LIGBT and diode for output stage of high voltage monolithic three-phase inverter IC

Structure of a high speed, high current capacity Latelal Insulated Gate Bipolar Transistor (LIGBT) and a diode for a 250V1A monolithic three-phase inverter IC are studied. A hybrid structure between Schottky junctions and pn junctions is effective for the diode, but not for the LIGBT. Characteristics of the IC using the LIGBT and diode are also presented.

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