论文信息 - Substrate noise-coupling characterization and efficient suppression in CMOS technology

Substrate noise-coupling characterization and efficient suppression in CMOS technology

This brief investigates the substrate noise coupling using S-parameters measurement. Radio frequency domain analysis shows that the noise isolation is strongly dependent on layout geometry, including the parameters such as p-n junction, physical separation distance, guard ring (GR), and deep n-well (DNW). We found that the noise coupling can be efficiently diminished by incorporating GR and DNW structures.

Wen-Kuan Yeh | Shuo-Mao Chen | Yean-Kuen Fang

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