Molybdenum oxide-base phase change resistive switching material

We investigated the temperature dependence of electrical resistance of a reactively sputtered Mo-oxide film with a composition near MoO3 and found that the sputtered Mo-oxide film shows a large electrical resistance drop of much more than 104-fold at over 350 °C. Such a large drop in electrical resistance was found to be caused by a phase transition from an amorphous state to a crystalline state. It was confirmed that a W/Mo-oxide/W device shows a typical resistive switching effect of a phase change random access memory material and exhibits reversible resistive switching by the application of unidirectional set and reset voltage. The resistance contrast of the device had a large value of about 105–106. Furthermore, the Mo-oxide film showed much better thermal stability in the amorphous state than conventional phase change materials. These results indicate that the Mo-oxide film is a promising oxide-base phase change material for phase change random access memory.

[1]  P. Fay,et al.  Molybdenum Carbamate Nanosheets as a New Class of Potential Phase Change Materials. , 2017, Nano letters.

[2]  Rainer Waser,et al.  Phase-Change and Redox-Based Resistive Switching Memories , 2015, Proceedings of the IEEE.

[3]  A. Pergament,et al.  Electrical Switching in Thin Film Structures Based on Molybdenum Oxides , 2014 .

[4]  Eric Pop,et al.  Phase change materials and phase change memory , 2014 .

[5]  M. Meyyappan,et al.  Ga-doped indium oxide nanowire phase change random access memory cells , 2014, Nanotechnology.

[6]  Sean Li,et al.  Tuneable resistive switching characteristics of In2O3 nanorods array via Co doping , 2013 .

[7]  Yasuo Takahashi,et al.  Resistance switching properties of molybdenum oxide films , 2012 .

[8]  Hisashi Shima,et al.  ReRAM technology; challenges and prospects , 2012, IEICE Electron. Express.

[9]  Y. Saito,et al.  Crystallization process and thermal stability of Ge1Cu2Te3 amorphous thin films for use as phase change materials , 2012 .

[10]  Hisashi Shima,et al.  Resistive Random Access Memory (ReRAM) Based on Metal Oxides , 2010, Proceedings of the IEEE.

[11]  Young Kook Lee,et al.  Effect of Heating Rate on the Activation Energy for Crystallization of Amorphous Ge2Sb2Te5 Thin Film , 2009 .

[12]  A. Kung,et al.  Phase-change memory devices based on gallium-doped indium oxide , 2009 .

[13]  Kailash Gopalakrishnan,et al.  Overview of candidate device technologies for storage-class memory , 2008, IBM J. Res. Dev..

[14]  Shih-Hung Chen,et al.  Phase-change random access memory: A scalable technology , 2008, IBM J. Res. Dev..

[15]  Hyunsang Hwang,et al.  A Materials Approach to Resistive Switching Memory Oxides , 2008 .

[16]  H. Okamoto.  In-O (Indium-Oxygen) , 2007 .

[17]  M. Wuttig,et al.  Phase-change materials for rewriteable data storage. , 2007, Nature materials.

[18]  G. Braunstein,et al.  Electric-pulse-induced reversible resistance in doped zinc oxide thin films , 2007 .

[19]  J. Goldstone,et al.  β-MoO3 produced from a novel freeze drying route , 1991 .

[20]  T. Ozawa,et al.  Kinetic analysis of derivative curves in thermal analysis , 1970 .

[21]  D. Morgan,et al.  Electrical phenomena in amorphous oxide films , 1970 .

[22]  Luke L. Y. Chang,et al.  Phase Relations in Refractory Metal‐Oxygen Systems , 1969 .

[23]  F. Argall.  Switching phenomena in titanium oxide thin films , 1968 .

[24]  T. Ozawa.  A New Method of Analyzing Thermogravimetric Data , 1965 .

[25]  T. W. Hickmott,et al.  BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES , 1965 .

[26]  W. E. Beadle,et al.  Switching properties of thin Nio films , 1964 .

[27]  T. W. Hickmott.  LOW-FREQUENCY NEGATIVE RESISTANCE IN THIN ANODIC OXIDE FILMS , 1962 .

[28]  Kenichi Nishiuchi,et al.  High Speed Overwritable Phase Change Optical Disk Material , 1987 .

[29]  E. Mccarron.  β-MoO3: a metastable analogue of WO3 , 1986 .

[30]  J. Bruyère,et al.  SWITCHING AND NEGATIVE RESISTANCE IN THIN FILMS OF NICKEL OXIDE , 1970 .

[31]  K. L. Chopra,et al.  Avalanche‐Induced Negative Resistance in Thin Oxide Films , 1965 .