Lasing characteristics of GaAs microresonators
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Axel Scherer | Yong-Hee Lee | J. H. English | J. L. Jewell | Samuel L. McCall | A. C. Gossard | A. Scherer | A. Gossard | J. Jewell | S. Mccall | J. English | Yong-Hee Lee
[1] Eli Yablonovitch,et al. Nearly ideal electronic properties of sulfide coated GaAs surfaces , 1987 .
[2] F. Koyama,et al. Microcavity GalaAs/GaAs surface-emitting laser with Ith = 6 mA , 1987 .
[3] H. Morkoç,et al. Extremely low resistance nonalloyed ohmic contacts on GaAs using InAs/InGaAs and InAs/GaAs strained-layer superlattices , 1988 .
[4] J. P. Harbison,et al. High-finesse (Al,Ga)As interference filters grown by molecular beam epitaxy , 1988 .
[5] Emil Wolf,et al. COHERENCE AND QUANTUM OPTICS , 1973 .
[6] Kam Y. Lau,et al. Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers , 1988 .
[7] J. Wiesenfeld,et al. Chirped picosecond pulses: evaluation of the time-dependent wavelength for semiconductor film lasers. , 1984, Applied optics.
[8] Kam Y. Lau,et al. High‐speed digital modulation of ultralow threshold (<1 mA) GaAs single quantum well lasers without bias , 1987 .
[9] A. Gossard,et al. GaAs-AlAs monolithic microresonater arrays , 1987 .
[10] De Martini F,et al. Anomalous spontaneous-stimulated-decay phase transition and zero-threshold laser action in a microscopic cavity. , 1988, Physical review letters.