Hybrid approach to two-dimensional surface-emitting diode laser arrays

A new hybrid structure for two‐dimensional surface‐emitting diode laser arrays has been demonstrated. Each hybrid array consists of linear arrays of GaAs/AlGaAs lasers, with conventional cleaved end facets, that are mounted in grooves etched in a Si substrate. The etched grooves have flat bottoms and 45° sidewalls that are coated with a highly reflecting Cr/Au layer. A hybrid array with three 4‐mm‐wide GaAs/AlGaAs linear laser arrays has been fabricated and tested. Approximately 10 W of peak power perpendicular to the array surface was obtained from each of the linear arrays for 11–12 A of pulsed current per array. The measured differential quantum efficiencies were 65–70%, indicating that the 45° metallized sidewalls deflect by 90° essentially all of the light emitted from the laser facets. The new approach allows for the use of integral Si heat sinks and should prove useful for fabricating large, high‐power, two‐dimensional laser arrays in any material system.

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