High resolution photoemission study of the surfactant desorption after Sb mediated Ge epitaxy on Si(001)

[1]  Boshart,et al.  Site Exchange of Ge and Sb on Si(100) during Surfactant-Mediated Epitaxial Growth. , 1996, Physical review letters.

[2]  Johansson,et al.  Mixed Ge-Si dimer growth at the Ge/Si(001)-(2 x 1) surface. , 1995, Physical Review Letters.

[3]  Cho,et al.  Final-state pseudopotential theory for the Ge 3d core-level shifts on the Ge/Si(100)-(2 x 1) surface. , 1994, Physical review. B, Condensed matter.

[4]  Tang,et al.  Stabilization of the asymmetric Ge dimer on Si(100) by charge transfer. , 1994, Physical Review B (Condensed Matter).

[5]  Ohno.  Site exchange mechanism in surfactant-mediated epitaxial growth. , 1994, Physical review letters.

[6]  Yu.,et al.  Diffusion and dimer exchange in surfactant-mediated epitaxial growth. , 1994, Physical review letters.

[7]  Patel,et al.  Direct measurement of the asymmetric dimer buckling of Ge on Si(001). , 1993, Physical review letters.

[8]  P. Pianetta,et al.  Microscopic study of the surfactant‐assisted Si, Ge epitaxial growth , 1992 .

[9]  Karlsson,et al.  Core-level spectroscopy of the clean Si(001) surface: Charge transfer within asymmetric dimers of the 2 x 1 and c(4 x 2) reconstructions. , 1992, Physical review letters.

[10]  C. Quate,et al.  Structure of the Sb‐terminated Si(100) surface , 1991 .

[11]  Reuter,et al.  Influence of surfactants in Ge and Si epitaxy on Si(001). , 1990, Physical review. B, Condensed matter.

[12]  R. Tromp,et al.  Microstructure and strain relief of Ge films grown layer by layer on Si(001). , 1990, Physical review. B, Condensed matter.

[13]  S. Kono,et al.  Angle-resolved-photoemission study of the electronic structure of the Si(001)c(4×2) surface , 1990 .

[14]  Reuter,et al.  Surfactants in epitaxial growth. , 1989, Physical review letters.

[15]  H. F. Winters,et al.  The interaction of Sb4 molecular beams with Si(100) surfaces: modulated-beam mass spectrometry and thermally stimulated desorption studies , 1986 .