Ultra‐high long‐term stability of oxide‐TTFTs under current stress

In this letter the stability of transparent thin-film transistors (TTFTs) based on the ZnO–SnO2 (ZTO) material system is investigated. Bottom-gate devices have been subject to electrical stress via a gate–source bias of 10 V and a drain-source bias of 10 V leading to a drain–source current of 188 µA. In optimized TTFTs with a composition of [Zn]:[Sn] = 36:64 the relative change of the saturated field effect mobility was less than 1% and the threshold voltage shift was about 320 mV after 1000 hours of operation. This extraordinary stability of ZTO TTFTs underlines their suitability as drivers in active matrix OLED displays. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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