论文信息 - A 146 mm/sup 2/ 8 Gb NAND flash memory with 70 nm CMOS technology

A 146 mm/sup 2/ 8 Gb NAND flash memory with 70 nm CMOS technology

A 146 mm/sup 2/ 8 Gb NANO flash memory with 4-level programmed cells is fabricated in a 70 nm CMOS technology. A single-sided pad architecture and extended block-addressing scheme without redundancy is adopted for die size reduction. The programming throughput is 6 MB/s and is comparable to binary flash memories.

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