SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics
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V. Jain | B. Zetterlund | D. L. Harame | P. Cheng | J. W. Adkisson | J. P. Gambino | C. Willets | S. U. Engelmann | J. Pekarik | M. Khater | D. Harame | P. Gray | J. Gambino | S. Engelmann | C. Willets | A. Pyzyna | V. Jain | R. Camillo-Castillo | P. Cheng | Q. Liu | J. Adkisson | R. A. Camillo-Castillo | Q. Z. Liu | M. H. Khater | P. B. Gray | R. K. Leidy | J. J. Pekarik | C. Parrish | A. M. Pyzyna | R. Leidy | B. Zetterlund | C. Parrish
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