Structural characterization of amorphous SiCxNy chemical vapor deposited coatings

Chemical bonding and local order around the different atoms of thick amorphous SiCxNy deposits [0.03⩽x/(x+y)⩽0.67] prepared with chemical vapor deposition at 1000–1200 °C using TMS–NH3–H2 have been investigated using x-ray photoelectron spectroscopy (XPS), Raman spectrometry, Fourier transform infrared spectrometry (FT-IR), electron energy loss spectroscopy (EELS) and 29Si magic-angle spinning nuclear magnetic resonance spectrometry (MAS-NMR). XPS analyses have shown that the main bonds are Si–C, Si–N, and C–C, and have suggested the existence of C–N bonds. According to Raman analyses and complementary FT-IR absorption of thin films, the coatings are nonhydrogenated. Si, C and N atomic chemical environments are more complicated than in a mixture of pure Si3N4–SiC phases. The examination of the Si KL2,3L2,3 line shapes recorded by XPS have allowed one to state the existence of Si(C4−nNn) units. Mixed coordination shells around silicon have been confirmed by EELS analyses. Additionally, FT-IR reflection ana...

[1]  F. Smith,et al.  Atomic bonding in amorphous carbon alloys: A thermodynamic approach , 1996 .

[2]  Jili He,et al.  Silicon Nitride and Silicon Carbonitride by the Pyrolysis of Poly(methylsiladiazane) , 1995 .

[3]  F. Babonneau,et al.  The Evolutionary Process during Pyrolytic Transformation of Poly(N-methylsilazane) from a Preceramic Polymer into an Amorphous Silicon Nitride/Carbon Composite , 1995 .

[4]  Masa-aki Suzuki,et al.  Characterization of Silicon Carbide–Silicon Nitride Composite Ultrafine Particles Synthesized Using a CO2 Laser by Silicon‐29 Magic Angle Spinning NMR and ESR , 1995 .

[5]  M. Muroyama,et al.  Formation of SiN Films by Plazma-Enhanced Chemical Vapor Deposition Using [(CH3)2N]3SiN3 , 1994 .

[6]  W. Sproul,et al.  Composition, structure and tribological properties of amorphous carbon nitride coatings , 1994 .

[7]  J. Halbritter,et al.  ARXPS studies of SiO_2-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(001) surfaces , 1994 .

[8]  Wei Zhang,et al.  Influence of temperature on the properties of SiCxNy:H films prepared by plasma-enhanced chemical vapour deposition , 1994 .

[9]  A. Bousetta,et al.  Formation of carbon nitride films on Si(100) substrates by electron cyclotron resonance plasma assisted vapor deposition , 1994 .

[10]  Boyd,et al.  Carbon nitride deposited using energetic species: A two-phase system. , 1994, Physical review letters.

[11]  P. E. Mijnarends,et al.  Effect of ion beam assistance on the microstructure of nonhydrogenated amorphous carbon , 1994 .

[12]  A. Zwick,et al.  Chemical bonding analysis of a-SiC : H films by Raman spectroscopy , 1994 .

[13]  S. Hsu,et al.  X‐ray induced AES study of the effect of chemically bound hydrogen on the oxidation kinetics of an Si3N4 powder , 1994 .

[14]  Y. Zhao,et al.  Synthesis and pyrolysis of polysilazane as the precursor of Si3N4/SiC ceramic , 1994, Journal of Materials Science.

[15]  F. Demichelis,et al.  Infrared vibrational spectra of hydrogenated amorphous and microcrystalline silicon carbon alloys. A comparison of their structure , 1993 .

[16]  Carles,et al.  Multiple-order Raman scattering in crystalline and amorphous silicon. , 1993, Physical review. B, Condensed matter.

[17]  S. Martelli,et al.  Nanocomposite ceramic powder production by laser-induced gas-phase reactions , 1993 .

[18]  H. Pépin,et al.  Effect of rapid thermal annealing on both the stress and the bonding states of a-SiC:H films , 1993 .

[19]  Masa-aki Suzuki,et al.  Synthesis of silicon carbide-silicon nitride composite ultrafine particles using a carbon dioxide laser , 1993 .

[20]  R. Corriu,et al.  Preparation of Silicon Carbonitrides from an Organosilicon Polymer: I, Thermal Decomposition of the Cross-linked Polysilazane , 1993 .

[21]  B. Nysten,et al.  Relationship between the structural organization and the physical properties of PECVD nitrogenated carbons , 1993 .

[22]  S. M. Hsu,et al.  Oxidation of surface-treated SiC platelets studied by XPS and bremsstrahlung-excited AES† , 1993 .

[23]  L. Guzman,et al.  SPECTROSCOPIC CHARACTERIZATION OF THERMALLY TREATED CARBON-RICH SI1-XCX FILMS , 1993 .

[24]  Jai-Young Lee,et al.  Structural and optical properties of hydrogenated amorphous silicon carbide deposited by glow discharge from C3H8‐SiH4‐H2 mixture , 1992 .

[25]  H. Pépin,et al.  A study of the effect of composition on the microstructural evolution of a–Si_xC_1−_x: H PECVD films: IR absorption and XPS characterizations , 1992 .

[26]  S. Enzo,et al.  Composite Si/C/N powder production by laser induced gas phase reactions , 1992 .

[27]  K. Gonsalves,et al.  Synthesis of Si(C, N) nanoparticles by rapid laser polycondensation/crosslinking reactions of an organosilazane precursor , 1992 .

[28]  A. Gheorghiu,et al.  Atomic configurations and local order in laser‐synthesized Si, Si‐N, Si‐C, and Si‐C‐N nanometric powders, as studied by x‐ray‐induced photoelectron spectroscopy and extended x‐ray‐absorption fine‐structure analysis , 1992 .

[29]  N. Novikov,et al.  Mechanical properties of thin ceramic coatings of the SiCN system deposited by reactive ion-plasma sputtering , 1992 .

[30]  V. Serin,et al.  EXELFS as a structural tool for studies of low Z-elements , 1992 .

[31]  R. Brook,et al.  Synthesis of dense silicon-based ceramics at low temperatures , 1992, Nature.

[32]  W. Sproul,et al.  Growth and characterization of C-N thin films , 1992 .

[33]  F. Taulelle,et al.  NMR characterization of silicon carbides and carbonitrides. A method for quantifying the silicon sites and the free carbon phase , 1992 .

[34]  S. Enzo,et al.  Composite ceramic powders obtained by laser induced reactions of silane and amines , 1991 .

[35]  M. Baraton,et al.  Nanometric Si/C/N composite powders: Laser synthesis and IR characterization , 1991 .

[36]  W. Zhang,et al.  SiCxNy:H films produced from an r.f. discharge of the SiH4CH4NH3 system☆ , 1991 .

[37]  K. R. Carduner,et al.  Characterization of β‐Silicon Carbide by Silicon‐29 Solid‐State NMR, Transmission Electron Microscopy, and Powder X‐ray Diffraction , 1990 .

[38]  K. Gerstenberg.  Film deposition in a radial flow reactor by plasma polymerization of hexamethyldisilazane , 1990 .

[39]  B. Lang,et al.  An AES study of damage induced by inert gas ions at SiO2 surfaces: influence of ion mass and energy , 1990 .

[40]  M. Tamor,et al.  Graphitic network models of ‘‘diamondlike’’ carbon , 1990 .

[41]  H. Bender,et al.  Damage and recovery by electron and ion beam irradiation during AES analysis of silicon oxynitrides , 1990 .

[42]  R. Woodin,et al.  Kinetics and mechanism of laser-driven powder synthesis from organosilane precursors , 1989 .

[43]  Bernard J. Feldman,et al.  Structural and optical properties of amorphous carbon nitride , 1988 .

[44]  D. Wheeler,et al.  Angle-resolved X-ray photoelectron spectroscopy of epitaxially grown (100) β-SiC to 1300 °C , 1987 .

[45]  K. Kamata,et al.  Hybridization between Si3N4 and SiC films by plasma CVD , 1986 .

[46]  N. Savvides.  Optical constants and associated functions of metastable diamondlike amorphous carbon films in the energy range 0.5–7.3 eV , 1986 .

[47]  R. Kaplan.  Surface studies of epitaxial β‐SiC on Si(100) , 1984 .

[48]  David Beeman,et al.  Modeling studies of amorphous carbon , 1984 .

[49]  A. Mitsuishi,et al.  Raman spectra of amorphous SiC , 1983 .

[50]  C. D. Wagner,et al.  Auger and photoelectron line energy relationships in aluminum–oxygen and silicon–oxygen compounds , 1982 .

[51]  S. Solin,et al.  Raman and IR absorption spectroscopic studies on α, β, and amorphous Si3N4 , 1981 .

[52]  G. Lucovsky.  Relation of Si–H vibrational frequencies to surface bonding geometry , 1979 .

[53]  R. Nemanich,et al.  First- and second-order Raman scattering from finite-size crystals of graphite , 1979 .

[54]  Sidney Addelman,et al.  trans-Dimethanolbis(1,1,1-trifluoro-5,5-dimethylhexane-2,4-dionato)zinc(II) , 2008, Acta crystallographica. Section E, Structure reports online.

[55]  M. Gorman,et al.  Direct evidence for homonuclear bonds in amorphous SiC , 1974 .

[56]  F. Tuinstra,et al.  Raman Spectrum of Graphite , 1970 .