论文信息 - Use of process and 2-D MOS simulation in the study of doping profile influence on S/D resistance in short channel MOSFET's

Use of process and 2-D MOS simulation in the study of doping profile influence on S/D resistance in short channel MOSFET's

At small VDS, gmreduction in MOSFET's is often attributed to mobility degradation due to increased vertical electric field with increasing VGS. This is correct for long channel devices; however, for short channel devices the parasitic series resistance of source/drain, RT, has a similar effect in reducing the gmvalue. In this paper, simulation is used to show how the lateral subdiffusion regions of S/D represent a dominant, VGS-dependent portion of the total resistance, since the doping profile there is steeply decreasing and the carrier concentration can be modulated by the gate voltage.

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