Future trends and applications of ultra-clean technology
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It is demonstrated that ultraclean technology is a crucial factor in developing high-quality processing technology for future ULSI fabrication. The simultaneous realization of three conditions, i.e. an ultraclean processing environment, an ultraclean wafer surface, and perfect process-parameter control, is what makes it possible to realize high-quality processing. A novel process flow for advanced CMOS device fabrication has been established by introducing total low-temperature processing as well as metal fluoridation technology, both of which have been realized for the first time by ultraclean technology.<<ETX>>
[1] Tadahiro Ohmi,et al. Low-temperature silicon epitaxy by low-energy bias sputtering , 1988 .
[2] Tadahiro Ohmi,et al. Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment , 1989 .
[3] Tadahiro Ohmi,et al. Control Factor of Native Oxide Growth on Silicon in Air or in Ultrapure Water , 1989 .
[4] Tadashi Shibata,et al. Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle process , 1989 .