Wannier-Stark ladder spectra in InxGa1−xAsGaAs strained layer piezo-electric superlattices
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D. W. Peggs | M. Pate | M. Hopkinson | G. Hill | R. Hogg | D. Whittaker | M. Skolnick | R. Grey | G. Rees | D. J. Mowbray | L. Hart | A. Willcox
[1] M. S. Skolnick,et al. Carrier screening effects in piezoelectric strained InGaAs/GaAs quantum wells grown on the [111]B axis , 1994 .
[2] F. Calle,et al. Conduction‐band engineering in piezoelectric [111] multiple quantum well p‐i‐n photodiodes , 1994 .
[3] M. S. Skolnick,et al. Growth and characterization of (111)B InGaAs/GaAs multi-quantum well PIN diode structures , 1994 .
[4] Richard A. Hogg,et al. Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111)B GaAs , 1993 .
[5] A. Smirl,et al. Magnitude, origin, and evolution of piezoelectric optical nonlinearities in strained [111]B InGaAs/GaAs quantum wells , 1993 .
[6] L. Eastman,et al. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure , 1990 .
[7] Mendez,et al. Stark localization in GaAs-GaAlAs superlattices under an electric field. , 1988, Physical review letters.
[8] Christian Mailhiot,et al. Theory of semiconductor superlattice electronic structure , 1990 .