Infrared and Raman comparative study of Yb-doped Y2SiO5 thin films and single crystals

In this study Yb-doped Y2SiO5 single crystals and thin films crystal field excitations and Raman active phonons characteristics have been compared using infrared absorption and Raman spectroscopy. The thin films high quality has been confirmed and their ability to adjust by co-doping various properties such as the Yb3+ sites occupations and Yb3+-Yb3+ pair interactions have been evidenced.