论文信息 - Improved Resistive Switching Characteristics of Ag-Doped ZrO 2 Films Fabricated by Sol-Gel Process

Improved Resistive Switching Characteristics of Ag-Doped ZrO 2 Films Fabricated by Sol-Gel Process

Ag-doped and pure ZrO2 thin films are prepared on Pt/Ti/SiO2/Si substrates by sol-gel process for resistive random access memory application. The highly reproducible resistive switching is achieved in the 10% Ag-doped ZrO2 devices. The improved resistive switching behaviour in the Ag doped ZrO2 devices could be attributed to Ag doping effect on the formation of the stable filamentary conducting paths. In addition, dual-step reset processes corresponding to three stable resistance states are observed in the 10% Ag doped ZrO2 devices, which may be implemented for the application of multi-bit storage.

[1] I. Yoo,et al. Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications , 2005, IEEE Electron Device Letters.

[2] M. Fujimoto,et al. TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching , 2006 .

[3] D. Bremaud,et al. Electrical current distribution across a metal–insulator–metal structure during bistable switching , 2001, cond-mat/0104452.

[4] L. Y. Chen,et al. Reproducible unipolar resistance switching in stoichiometric ZrO2 films , 2007 .

[5] T. W. Hickmott,et al. BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES , 1965 .

[6] S. Long,et al. Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide , 2007 .

[7] S. Artemenko. Impurity-induced stabilization of Luttinger liquid in quasi-one-dimensional conductors , 2004 .

[8] Byung Joon Choi,et al. Identification of a determining parameter for resistive switching of TiO2 thin films , 2005 .

[9] S. Seo,et al. Reproducible resistance switching in polycrystalline NiO films , 2004 .

[10] S. O. Park,et al. Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[11] Sung-Sil Cho,et al. Study on the resistive switching time of TiO2 thin films , 2006 .