论文信息 - Thermally robust 90 nm node Cu-Al wiring technology using solid phase reaction between Cu and Al

Thermally robust 90 nm node Cu-Al wiring technology using solid phase reaction between Cu and Al

This paper describes a thermally robust and low cost Cu-Al wiring technology using solid phase reaction between ECD Cu and PVD Al. No significant sheet resistance and uniformity change has been obtained with precise Al concentration control. This technology dramatically improves reliable performance for stress induced voiding (SIV) as well as electro-migration (EM) and the most promising candidate for SIV free 90 nm Cu-Al process with lower cost.

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