论文信息 - Flow-Rate Modulation Epitaxy Of InP By Metalorganic Chemical Vapor Deposition

Flow-Rate Modulation Epitaxy Of InP By Metalorganic Chemical Vapor Deposition

We have used the flow-rate modulation epitaxy technique to grow InP in a modified atomospheric-pressure metalorganic chemical vapor deposition system. We demonstrate the deposition of a monolayer in each growth cycle. The growth is mass-transport-limited at higher substrate temperatures, i.e., 420 to 580°C, and is kinetic-limited with an activation energy of 0.57 eV for lower temperatures. The surface morphology is specular even for InP layers grown as low as 330°C.

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