Intégration fonctionnelle de la fonction diode rapide : L'intégration des semiconducteurs de puissance

. This article discusses modelling and production of new in-silicon power architectures featuring monolithic integration of basic power functions, with specific reference to a high-voltage (600 V) fast diode function. . Integration of this diode with other components in the same chip precludes the use of metal diffusion techniques to reduce carrier life. This would deteriorate the electrical characteristics of the neighbouring components. . A mixed bipolar Schottky structure might provide a solution to this problem. The bipolar Schottky concept ensures limited carrier injection, while thin film technology ensures low doping levels and thickness. The resulting design offers promising static and dynamic characteristics, with integration of the fast diode function.