Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography

[1]  G. Renaud,et al.  Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substrates. , 2009, Physical review letters.

[2]  Hao Hu,et al.  Theory of directed nucleation of strained islands on patterned substrates. , 2008, Physical review letters.

[3]  F. Uhlík,et al.  Intermixing in heteroepitaxial islands: fast, self-consistent calculation of the concentration profile minimizing the elastic energy , 2008 .

[4]  H. von Känel,et al.  SiGe wet chemical etchants with high compositional selectivity and low strain sensitivity , 2008 .

[5]  Zuimin Jiang,et al.  Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates , 2008 .

[6]  O. Schmidt,et al.  Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography. , 2008, Nano letters.

[7]  V. Hegadekatte,et al.  Composition maps in self-assembled alloy quantum dots. , 2008, Physical review letters.

[8]  O. Schmidt,et al.  Critical shape and size for dislocation nucleation in Si1-xGex islands on Si(001). , 2007, Physical review letters.

[9]  L. Nanver,et al.  SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening , 2007 .

[10]  G. Bauer,et al.  Delayed plastic relaxation on patterned Si substrates: Coherent SiGe pyramids with dominant {111} facets , 2007 .

[11]  O. Schmidt Lateral alignment of epitaxial quantum dots , 2007 .

[12]  Mathieu Stoffel,et al.  Morphological evolution and lateral ordering of uniform SiGe/Si(001) islands , 2006, Microelectron. J..

[13]  J. Tersoff,et al.  Local equilibrium and global relaxation of strained SiGe/Si(001) layers , 2006 .

[14]  T. Metzger,et al.  Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping , 2005 .

[15]  G. Kar,et al.  Material distribution across the interface of random and ordered island arrays. , 2004, Physical review letters.

[16]  G. Bauer,et al.  Structural properties of self-organized semiconductor nanostructures , 2004 .

[17]  G. Bauer,et al.  Site-controlled and size-homogeneous Ge islands on prepatterned Si (001) substrates , 2004 .

[18]  R Stanley Williams,et al.  3D composition of epitaxial nanocrystals by anomalous X-ray diffraction: observation of a Si-rich core in Ge domes on Si(100). , 2003, Physical review letters.

[19]  David J. Smith,et al.  Nanometer-scale composition measurements of Ge/Si(100) islands , 2003 .

[20]  O. Schmidt,et al.  Self-assembled Ge/Si dots for faster field-effect transistors , 2001 .

[21]  L. B. Freund,et al.  Evolution of coherent islands in Si 12x Ge x /SiÑ001Ö , 1999 .

[22]  J. Groenen,et al.  Strain-induced island scaling during Si1−xGex heteroepitaxy , 1998 .

[23]  Eaglesham,et al.  Dislocation-free Stranski-Krastanow growth of Ge on Si(100). , 1990, Physical review letters.