论文信息 - RF noise in 1.5 nm gate oxide MOSFETs and the evaluation of the NMOS LNA circuit integrated on a chip

RF noise in 1.5 nm gate oxide MOSFETs and the evaluation of the NMOS LNA circuit integrated on a chip

Recently, direct tunneling gate oxide MOSFETs have shown the potential of enabling extremely high RF performance in analog applications. An excellent cutoff frequency of more than 150 GHz was reported at a gate length of less than 0.1 /spl mu/m. In this paper, RF noise characteristics of the MOSFETs are reported in detail. The gate oxide thickness and supply voltage dependencies were investigated. In addition, NMOS LNA (low noise amplifier) circuits made with 1.5 nm gate oxide MOSFETs were evaluated for the first time. Good RF analog circuit operation with very low noise and high gain was confirmed.

[1] Morimoto,et al. 0.25 /spl mu/m salicide CMOS Technology Thermally Stable Up To 1,000/spl deg/C With High TDDB Reliability , 1997, 1997 Symposium on VLSI Technology.