A device model for metal-semiconductor-metal photodetectors and its applications to optoelectronic integrated circuit simulation

Poisson's equation, current-continuity equations, and a rate equation for charged traps are numerically solved in two dimensions, to explain the behavior of photogenerated carriers and electric fields in GaAs metal-semiconductor-metal photoconductors (MSM PDs). An analytical model is proposed on the basis of these solutions and implemented in a SPICE-like circuit simulator. Simulated transient responses for an MSM PD and a monolithic optoelectronic receiver, consisting of an MSM PD and a MESFET transimpedance amplifier, are in good agreement with measured results. >

[1]  T. Shibata,et al.  Fullwave analysis of picosecond photoconductive switches , 1990 .

[2]  Rodney S. Tucker Circuit model of double-heterojunction laser below threshold , 1981 .

[3]  V. Diadiuk,et al.  Picosecond optoelectronic switches using composite electronic materials , 1987 .

[4]  K. Yamasaki,et al.  Buried p-layer SAINT for very high-speed GaAs LSI's with submicrometer gate length , 1985, IEEE Transactions on Electron Devices.

[5]  T. Ikoma,et al.  Computer-aided analysis of GaAs n-i-n structures with a heavily compensated i-layer , 1986, IEEE Transactions on Electron Devices.

[6]  D. J. Pope,et al.  Microwave Circuit Models of Semiconductor Injection Lasers , 1982 .

[7]  Tadao Nagatsuma,et al.  Flux-flow type Josephson oscillator for millimeter and submillimeter wave region , 1983 .

[8]  M. Takeshima Effect of Auger recombination on laser operation in Ga1−xAlxAs , 1985 .

[9]  Yukio Akazawa,et al.  4-GHz band GaAs monolithic limiting amplifier , 1986 .

[10]  John F. Ewen,et al.  Gb/s fiber optic link adapter chip set , 1988, 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..

[11]  T. Sugeta,et al.  Metal-Semiconductor-Metal Photodetector for High-Speed Optoelectronic Circuits , 1980 .

[12]  T. Sugeta,et al.  WP-B2 high-gain metal—Semiconductor—Metal photodetectors for high-speed optoelectronic circuits , 1979, IEEE Transactions on Electron Devices.

[13]  D. Auston CHAPTER 4 – Picosecond Photoconductors: Physical Properties and Applications , 1984 .

[14]  Gerard Mourou,et al.  Theoretical and experimental investigations of subpicosecond photoconductivity , 1989 .

[15]  M. Pollack Progress in III-V optoelectronic integrated circuits , 1988, 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..

[16]  P. Vettiger,et al.  5.2-GHz bandwidth monolithic GaAs optoelectronic receiver , 1988, IEEE Electron Device Letters.